Current location：Commonly used mixed gases in the semiconductor industry
1103, 2023
1. epitaxial (growth) mixture: in the semiconductor industry, in the carefully selected substrate on the choice of chemical vapor deposition method, the growth of one or more layers of material used in the gas called epitaxial gas. Commonly used silicon epitaxial gases are dichlorosilicate (DCS), silicon tetrachloride (SiCl4) and silane. Mainly used for epitaxial silicon deposition, silicon oxide film deposition, silicon nitride film deposition, solar cells and other photoreceptors of amorphous silicon film deposition. Epitaxy is a process in which a single crystal material is deposited and grown on the substrate surface.
2. chemical vapor deposition (CVD) with the mixture: CVD is the use of volatile compounds, gas-phase chemical reaction by the deposition of a single element and the compound of a method, that is, the application of gas-phase chemical reaction of a filming method. Depending on the type of film, the chemical vapor deposition (CVD) gas used is also different.
3. doping mixture: In the semiconductor device and integrated circuit manufacturing, the import of electronic gas plus micro-signal bluceren consultation to understand. Some impurities are incorporated into the semiconductor material, so that the material has the required conductivity type and a certain resistivity, to create resistance, PN junction, buried layer. The gas used in the doping process is called a dopant gas. Mainly include arsenic, phosphorus, phosphorus trifluoride, phosphorus pentafluoride, arsenic trioxide, arsenic pentafluoride, boron trifluoride, diborane and so on. The dopant source is usually mixed with the carrier gas (such as argon and nitrogen) in the source cabinet. After mixing, the gas stream is continuously injected into the diffusion furnace and surrounded by the wafer. The dopant is deposited on the wafer surface to react with the silicon to form a dopant Metal and migrate into silicon.
4. etching mixture: etching is the substrate without photoresist masking of the processing surface (such as metal film, silicon oxide film, etc.) etching, leaving the photoresist masked area preserved in order to the substrate surface Get the desired imaging graphics. Etching methods are wet chemical etching and dry chemical etching. The gas used for dry chemical etching is called an etching gas. The etching gas is usually a fluoride gas (halide), such as carbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane and the like.
2. chemical vapor deposition (CVD) with the mixture: CVD is the use of volatile compounds, gas-phase chemical reaction by the deposition of a single element and the compound of a method, that is, the application of gas-phase chemical reaction of a filming method. Depending on the type of film, the chemical vapor deposition (CVD) gas used is also different.
3. doping mixture: In the semiconductor device and integrated circuit manufacturing, the import of electronic gas plus micro-signal bluceren consultation to understand. Some impurities are incorporated into the semiconductor material, so that the material has the required conductivity type and a certain resistivity, to create resistance, PN junction, buried layer. The gas used in the doping process is called a dopant gas. Mainly include arsenic, phosphorus, phosphorus trifluoride, phosphorus pentafluoride, arsenic trioxide, arsenic pentafluoride, boron trifluoride, diborane and so on. The dopant source is usually mixed with the carrier gas (such as argon and nitrogen) in the source cabinet. After mixing, the gas stream is continuously injected into the diffusion furnace and surrounded by the wafer. The dopant is deposited on the wafer surface to react with the silicon to form a dopant Metal and migrate into silicon.
4. etching mixture: etching is the substrate without photoresist masking of the processing surface (such as metal film, silicon oxide film, etc.) etching, leaving the photoresist masked area preserved in order to the substrate surface Get the desired imaging graphics. Etching methods are wet chemical etching and dry chemical etching. The gas used for dry chemical etching is called an etching gas. The etching gas is usually a fluoride gas (halide), such as carbon tetrafluoride, nitrogen trifluoride, trifluoromethane, hexafluoroethane, perfluoropropane and the like.